ne856m13 npn silicon transistor new miniature m13 package: small transistor outline 1.0 x 0.5 x 0.5 mm low profile / 0.50 mm package height flat lead style for better rf performance low noise figure: nf = 1.4 db at 1 ghz high collector current: i c max = 100 ma features outline dimensions (units in mm) package outline m13 preliminary data sheet part number ne856m13 eiaj 1 registered number 2SC5614 package outline m13 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 3 v, i c = 7 ma, f = 1 ghz ghz 3 4.5 nf noise figure at v ce = 3 v, i c = 7 ma, f = 1 ghz db 1.4 2.5 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 7 ma, f = 1 ghz db 7 10 h fe 2 forward current gain at v ce = 3 v, i c = 7 ma 80 145 i cbo collector cutoff current at v cb = 10 v, i e = 0 a1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a1 c re 3 feedback capacitance at v cb = 3 v, i e = 0, f = 1 mhz pf 0.7 1.5 electrical characteristics (t a = 25 c) pin connections 1. emitter 2. base 3. collector california eastern laboratories notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. capacitance is measured with emitter and case connected to the guard terminal at the bridge. description the ne856m13 transistor is designed for low cost amplifier and oscillator applications. low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. nec's new low profile/flat lead style "m13" package is ideal for today's portable wireless applications. the ne856 is also available in chip, micro-x, and eight different low cost plastic surface mount package styles. +0.1 0.05 +0.1 0.05 +0.1 0.05 0.5 3 0.1 0.1 1 2 1.0 +0.1 0.05 +0.1 0.05 0.3 0.35 0.35 0.7 0.15 +0.1 0.05 0.15 0.2 0.2 0.2 0.125 0.5 0.05 x x bottom view 1 2 3
notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. with device mounted on 1.08 cm 2 x 1.2 mm glass epoxy board. symbols parameters units ratings v cbo collector to base voltage v 20 v ceo collector to emitter voltage v 12 v ebo emitter to base voltage v 3 i c collector current ma 100 p t 2 total power dissipation mw 140 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories headquarters 4590 patrick henry drive santa clara, ca 95054-1817 (408) 988-3500 telex 34-6393 fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) internet: http://www.cel.com 2/09/2000 data subject to change without notice ne856m13 collector current, i c (ma) dc forward current gain, h fe forward current gain vs. collector current typical performance curves (t a = 25 c) v ce = 10 v 1 2 3 5 7 10 20 30 50 500 300 200 100 70 50 30 20 10 collector to emitter voltage, v ce (v) collector current, i c (ma) collector current vs. collector to emitter voltage 100 20 40 60 80 0 24 81012 6
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